Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

ABSTRACT

A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

RELATED APPLICATION DATA

This application is a division of U.S. patent application Ser. No.10/813,528, filed Mar. 30, 2004, the entirety of which is incorporatedherein by reference to the extent permitted by law.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for producing a structuredsubstrate, a structured substrate, a method for producing asemiconductor light emitting device, a semiconductor light emittingdevice, a method for producing a semiconductor device, a semiconductordevice, a method for producing a device, and a device, in particular, tothose suitable for producing a semiconductor laser, a light emittingdiode, or an electron traveling device using for example a nitride typeIII-V group compound semiconductor.

2. Description of the Related Art

Nitride type III-V group compound semiconductors such as GaN, AlGaN,GaInN, and AlGaInN feature in a large band gap E_(g) and directtransition semiconductor materials in comparison with arsenic type III-Vgroup compound semiconductors such as AlGaInAs and phosphorous typeIII-V group compound semiconductors such as AlGaInP. Thus, these nitridetype III-V group compound semiconductors have attracted considerableattention as materials of semiconductor lasers that can emit shortwavelength light ranging from ultraviolet ray to green and materials ofsemiconductor light emitting devices such as light emitting diodes(LEDs) that can cover a wide range of light emitting wavelengths fromultraviolet ray to red and white. These materials are expected for wideapplications such as high density optical discs, full color displays,environmental and medical fields.

In addition, these nitride type III-V group compound semiconductors forexample GaN feature in a large saturation speed in a high electricfield, a high temperature operation of for example up to around 400° C.,and continuous crystal growth for a semiconductor layer and aninsulation layer using AlN in for example ametal-insulator-semiconductor (MIS) structure. Thus, these nitride typeIII-V group compound semiconductors are expected for materials thatcompose radio frequency electronic devices that can operate at hightemperature and with a large output.

In addition, these nitride type III-V group compound semiconductors havethe following advantages.

(1) Since they have higher thermal conductivities than GaAs typesemiconductors, they are suitable for devices that operate at hightemperatures and with large outputs.

(2) Since they are chemically stable and hard, they have goodreliability.

(3) They are compound semiconductor materials that less contaminateenvironment. In other words, AlGaInN type semiconductors do not containenvironmental pollutants and poisonous substances. In reality, they donot contain arsenic (As) for AlGaAs type semiconductors, cadmium (Cd)for ZnCdSSe type semiconductors, and a material arsine (AsH₃).

However, proper substrate materials for devices using nitride type III-Vgroup compound semiconductors that have good reliability are not known.

To obtain high quality crystals, substrate materials for nitride typeIII-V group compound semiconductors have the following problems andconditions to be solved and satisfied.

(1) Structural materials GaN, AlGaN, and GaInN of the nitride type III-Vgroup compound semiconductors are of full distortion type of which thereare different lattice constants. Thus, compositions, thicknesses, and soforth of nitride type III-V group compound semiconductors and substratesshould be designed so that they are free from cracks and obtain goodcrystal films.

(2) A high quality substrate that can lattice-match GaN has not beendeveloped. Like a high quality GaAs substrate that can lattice-match aGaAs type semiconductor and a GaInP type semiconductor and a highquality InP substrate that can lattice-match a GaInAs typesemiconductor, for example a high quality GaN substrate is underdevelopment. A SiC substrate having a relatively small difference oflattice constants is expensive. In addition, it is difficult to producea SiC substrate having a large diameter. Since a tensile distortiontakes place in a crystal film, it easily cracks. In addition, there isno substrate that can lattice-match GaN other than those.

(3) Necessary conditions of substrate materials for nitride type III-Vgroup compound semiconductors are a high crystal growth temperature ofaround 1000° C. and no deterioration and no corrosion of V groupmaterials in an ammonium atmosphere.

In consideration of the foregoing reasons, as a substrate of a nitridetype III-V group compound semiconductor, a sapphire substrate is oftenused.

A sapphire substrate is stable at crystal growth temperature of anitride type III-V group compound semiconductor. Thus, as an advantage,high quality substrates having a diameter of two inches or three inchescan be stably supplied. However, lattice-mismatch of a sapphiresubstrate to GaN is large (around 13%). Thus, a buffer layer made of GaNor AlN is grown on the sapphire substrate at low temperature. Above thebuffer layer, a nitride type III-V group compound semiconductor isgrown. As a result, although a single crystal of a nitride type III-Vgroup compound semiconductor can be grown, the defect density is aslarge as 10⁸ to 10⁹ (cm⁻²) due to lattice mismatching. Thus, when thenitride type III-V group compound semiconductor is used for asemiconductor laser, it does not have reliability for a long time.

In addition, (1) since a sapphire substrate does not have cleavage, anend plane of a laser cannot be stably formed with specular property. (2)Since sapphire is insulative, it is necessary to take out a p-sideelectrode and an n-side electrode from the upper surface of thesubstrate. (3) When a crystal growth film is thick, due to thedifference of thermal expansion coefficients of a nitride type III-Vgroup compound semiconductor and sapphire, the substrate largely skewsat room temperature. As a result, the device forming process isadversely affected.

To obtain a high quality semiconductor crystal that is grown on asubstrate such as a sapphire substrate whose lattice constant isdifferent from the semiconductor crystal, a method using epitaxiallateral overgrowth (ELO) is known. In the ELO, high crystal qualityregions (lateral growth regions) and low crystal quality regions (orhigh defect density regions) (on seed crystals, their boundaries,meeting portions, and so forth) periodically take place. However, whenthe size of an active region (for example, a light emitting region of alight emitting device or an electron traveling region of an electrontraveling device) is not large, the period of the ELO can be greaterthan the interval of stripes of a semiconductor laser and the intervalof emitter region/collector region (or source region/drain region) of atransistor. For example, the period of the ELO is 10 to 20 μm, whereasthe size of an active region of a device is around several μm. Thus, anactive region can be designed to be formed in a high quality region.

When a device is formed on a sapphire substrate by the ELO, in additionto the foregoing problem of bad cleavage due to characteristics ofsapphire, there are for example the following problems.

(1) Since the number of steps necessary for the ELO is large, the yielddecreases.

(2) Since the crystal film thickness increases for the ELO, thesubstrate largely skews due to thermal stress. As a result, thecontrollabilities of the crystal growing step and wafer processdeteriorate.

(3) The device size is restricted. A device such as an LED, a photodetector (PD), and an integrated circuit device that have an activeregion greater than the ELO period (namely, one side of the activeregion is for example several hundred μm), since all the device regioncannot be formed as high crystal quality regions, the effect of the ELOcannot be fully obtained.

Although the foregoing problems would be solved when a high quality GaNsubstrate could be obtained. However, so far, a high quality GaNsubstrate having a large diameter has not been obtained. This is becausea good seed crystal cannot be obtained from GaN by hydride vapor phaseepitaxy (HVPE), which is high temperature (high pressure) growth. Thus,single crystal growth cannot be stably performed. As a result, a highquality substrate cannot be easily produced.

Japanese Patent Laid-Open Publication No. 2001-102307 has proposed amethod for producing a single crystal GaN substrate so as to solve theforegoing problems. According to the related art, after a GaN seedsubstrate having a high defect density is formed, a three-dimensionalfacet as a core is formed at a part thereof. A crystal is grown so thatthe facet is not closed. Crystal dislocations are gathered around thecore portion. As a result, a wide substrate having high quality isproduced.

However, that technology disclosed in Japanese Patent Laid-OpenPublication No. 2001-102307 causes the through-dislocations to begathered around a region of a growth layer so as to decease thethrough-dislocations of the other regions. Thus, a low defect densityregion and high defect density regions coexist in the obtained singlecrystal GaN substrate. In addition, the positions of the high defectdensity regions cannot be controlled. Instead, the high defect densityregions randomly take place. Thus, when a semiconductor device forexample a semiconductor laser is produced, a nitride type III-V groupcompound semiconductor layer is grown on a single crystal GaN substrate.At that point, a high defect density region cannot be prevented frombeing formed in a light emitting region. As a result, light emittingcharacteristics and reliability of the semiconductor laser deteriorate.

OBJECTS AND SUMMARY OF THE INVENTION

Therefore, in view of the foregoing, it would be desirable to provide asemiconductor light emitting device that has good characteristics suchas good light emitting characteristic, good reliability, and long life,to provide a method for producing a structured substrate that allows asemiconductor device that has good characteristics, good reliability,and long life to be easily produced, and to provide such a structuredsubstrate.

In addition, it would be desirable to provide a semiconductor lightemitting device that has good characteristics such as a light emittingcharacteristic, good reliability, and long life and to provide a methodfor easily producing such a semiconductor light emitting device.

In addition, it would be desirable to provide a semiconductor devicethat has good characteristics, good reliability, and long life and toprovide a method for easily producing such a semiconductor device.

In addition, it would be desirable to provide various types of devicesthat have good characteristics, good reliabilities, and long lives andto provide a method for easily producing such devices.

The inventor of the present invention intensively studied the foregoingproblems and obtained the following result. The obtained result will bedescribed in brief.

The inventor improved the technology disclosed in Japanese PatentLaid-Open Publication No. 2001-102307 and succeeded in controlling thepositions of high defect density regions that take place in a low defectdensity region. In other words, high defect density regions are notgathered while a crystal is being grown. Instead, a seed crystal or thelike is artificially, circularly and regularly (for exampleperiodically) formed on a proper substrate such as a GaAs substrate. Onthe seed crystal, a crystal is grown so as to control the positions ofthe high defect density regions. As a result, the crystal quality can beimproved and a good crystal region can be widened. In this case, byarranging a seed crystal or the like, a pattern of the high defectdensity regions can be freely changed.

In this case, the seed crystal or the like is for example a polycrystal,an amorphous substance, a single crystal of GaN, a nitride type III-Vgroup compound semiconductor such as AlGaInN other than GaN, or amaterial other than a nitride type III-V group compound semiconductor.However, as long as the seed crystal or the like is a core that definesthe position at which crystal defects gather, the structure of the seedcrystal or the like is not restricted.

When a semiconductor light emitting device such as a semiconductorlaser, more generally, a semiconductor device is produced using such asubstrate, it is necessary to prevent high defect density regions on thesubstrate from adversely affecting the device. In other words, when asemiconductor layer is grown on a substrate, defects of high defectdensity regions on a base substrate propagate to the semiconductorlayer. Thus, it is necessary to prevent the characteristics of thedevice and the reliability thereof from deteriorating due to thedefects. The inventor evaluated various techniques for solving such aproblem and finally found that the following technique is effective.

In other words, on the foregoing substrate, high defect density regionscan be regularly arranged. According to the arrangement of the highdefect density regions, the position of an active region of the device(for example, a light emitting region of a light emitting device) can bedesigned. As a result, the active region of the device can be preventedfrom passing through a high defect density region. Consequently, thedevice can be prevented from being adversely affected by high defectdensity regions of the substrate. Thus, the characteristics andreliability of the device can be prevented from deteriorating andlowering due to defects.

The foregoing technique is effective to produce a semiconductor devicethat uses a semiconductor other than a nitride type III-V group compoundsemiconductor when it is difficult to obtain a substrate whose materialis the same as a semiconductor used for the device and that has a lowdefect density.

The inventor of the present invention studied the obtained results andfinally devised the present invention.

To solve the foregoing problem, a first aspect of the present inventionis a method for producing a structured substrate, comprising the stepof:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce the structured substrate, the second average dislocation densitybeing greater than the first average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

The structured substrate includes one type of which a structure isdirectly formed on a bulk nitride type III-V group compoundsemiconductor substrate and another type of which a nitride type III-Vgroup compound semiconductor layer is grown on a bulk nitride type III-Vgroup compound semiconductor substrate so as to form a structure on thenitride type III-V group compound semiconductor layer.

The position and orientation of the structure of the structuredsubstrate are designated so that it does not pass through any one of thesecond regions. Typically, the plurality of second regions areperiodically arranged. In reality, the second regions are formed in ahexagonal lattice shape, a rectangular lattice shape, or a squarelattice shape. In addition, two or more types of patterns of the secondregions may coexist. Moreover, a portion of which the second regions areperiodically arranged and a portion of which the second regions arearranged regularly but not periodically may coexist.

Typically, the structure of the structured substrate and the pluralityof second regions are periodically arranged. When the relation ofw₂=n×w₁ or w₁=n×w₂ is satisfied depending on the values of w₁ and w₂,where w₁ represents the period of the structure of the structuredsubstrate, w₂ represents the period of the plurality of second regions,and n represents any natural number, the structure of the structuredsubstrate does not pass through the second regions on all the surface ofthe structured substrate.

When a semiconductor device is formed on the structured substrate, thestructure of the structured substrate is an active region of thesemiconductor device. The semiconductor device includes a light emittingdevice such as a light emitting diode, a semiconductor laser, or thelike, a photo detector, a field effect transistor (FET) such as a highelectron mobility transistor, and an electron traveling device such as ahetero junction bipolar transistor (HBT) (this definition applies to thedescription that follows). The active region represents a light emittingregion of a semiconductor light emitting device, a light receivingregion of a semiconductor photo detector, and an electron travelingregion of an electron traveling device (this definition applies to thedescription that follows). When the mask pattern that is selectivelygrown in the lateral direction is formed on the substrate, the structureof the structured substrate represents a portion that is not coated bythe mask pattern.

The interval of two adjacent second regions or the arrangement period ofthe second regions is selected in accordance with the size of the deviceand so forth. Generally, the interval or arrangement period is 20 μm orgreater, 50 μm or greater, or 100 μm or greater. The upper limit of theinterval or arrangement period of the second regions is not clearlydefined. However, generally, the interval or arrangement period of thesecond regions is around 1000 μm. The second regions typically pierce anitride type III-V group compound semiconductor substrate. The secondregions are typically formed in an irregular polygonal prism shapealthough they depend on the shapes of seed crystals. Third regions astransitional regions may be disposed between the first region and thesecond regions, the third regions having a third average dislocationdensity that is greater than the first average dislocation density andlower than the second average dislocation density. In this case, mostpreferably, the structure of the structured substrate is formed so thatthe structure does not pass through any one of the second regions andthe third regions.

The diameter of each of the second regions is typically 10 μm or greaterand 100 μm or smaller. The diameter of each of the second regions ismore typically 20 μm or greater and 50 μm or smaller. When the thirdregions are disposed, the diameter of each of the third regions istypically greater than the diameter of each of the second regions by 20μm or greater and 200 μm or smaller. The diameter of each of the thirdregions is more typically greater than the diameter of each of thesecond regions by 40 μm or greater and 160 μm or smaller. The diameterof each of the third regions is most typically greater than the diameterof each of the second regions by 60 μm or greater and 140 μm or smaller.

The average dislocation density of each of the second regions isgenerally five times greater than the average dislocation density of thefirst region.

The average dislocation density of the first region is typically 2×10⁶cm⁻² or smaller and the average dislocation density of each of thesecond regions is typically 1×10⁸ cm⁻² or greater. When the thirdregions are disposed, the average dislocation density of each of thethird regions is typically 1×10⁸ cm⁻² or smaller and 2×10⁶ cm⁻² orgreater.

To prevent the second regions that have a high average dislocationdensity from adversely affecting an active region of for example asemiconductor device of the structured substrate, the active region isspaced apart from any one of the second regions by 1 μm or greater,preferably 10 μm or greater, more preferably 100 μm or greater. Whenthere are third regions, most preferably an active region of for examplea semiconductor device of the structured substrate does not pass throughany one of the second regions and the third regions. More practically,when the structured substrate is used for a semiconductor laser, aregion in which a drive current flows through a stripe shaped electrodeis preferably spaced apart from any one of the second regions by 1 μm orgreater, more preferably by 10 μm or greater, further more preferably by100 μm or greater. When there are third regions, most preferably, aregion in which the drive current flows through a stripe shapedelectrode does not pass through any one of the second regions and thethird regions. The number of stripe shaped electrodes, namely the numberof laser stripes, may be one or plurality. The width of the stripeshaped electrode can be selected as required.

When necessary, a plurality of portions that are different from otherportions in the interval of the second regions and/or the arrangementthereof as alignment marks may be formed. In this case, these alignmentmarks can be used to align a mask.

The nitride type III-V group compound semiconductor substrate or thenitride type III-V group compound semiconductor layer is most generallymade of Al_(x)B_(y)Ga_(1-x-y-z)In_(z)As_(u)N_(1-u-v)P_(v) (where 0≦x≦1,0≦y≦1, 0≦z≦1, 0≦u≦1, 0≦v≦1, 0≦x+y+z<1, 0≦u+v<1). The nitride type III-Vgroup compound semiconductor substrate or the nitride type III-V groupcompound semiconductor layer is more practically made ofAl_(x)B_(y)Ga_(1-x-y-z)In_(z)N (where 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦x+y+z<1).The nitride type III-V group compound semiconductor substrate or thenitride type III-V group compound semiconductor layer is typically madeof Al_(x)Ga_(1-x-z)In_(z)N (where 0≦x≦1, 0≦z≦1). The nitride type III-Vgroup compound semiconductor substrate is most typically made of GaN.

The description for the first aspect of the present invention applies tothe other aspects unless that is contrary to characteristics of theother aspects.

A second aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A third aspect of the present invention is a method for producing astructured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce thestructured substrate, the second average defect density being greaterthan the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fourth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density, the second averagedefect density being greater than the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

According to the third aspect and fourth aspect of the presentinvention, the “average defect density” represents an average density ofall lattice defects that adversely affect characteristics andreliability of a device. The defects include all types of defects suchas dislocation, stacking defect, and point defect (this definitionapplies to the description that follows).

A fifth aspect of the present invention is a method for producing astructured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce thestructured substrate, the crystallinity of the second regions beingworse than the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A sixth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal, the crystallinity of thesecond regions being worse than the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

According to the fifth aspect and sixth aspect of the present invention,the first region made of a crystal is a single crystal. The secondregions whose crystallinity is worse than the first region is a singlecrystal, an amorphous substance, or a mixture of at least two thereof(this definition applied to the description that follows). Thiscorresponds to the case that the average dislocation density or averagedefect density of the second regions is greater than that of the firstregion.

A seventh aspect of the present invention is a method for producing asemiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce the semiconductor light emitting device, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

An eighth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A ninth aspect of the present invention is a method for producing asemiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce thesemiconductor light emitting device, the second average defect densitybeing greater than the first average defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A tenth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect density,the second average defect density being greater than the first averagedefect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

An eleventh aspect of the present invention is a method for producing asemiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce thesemiconductor light emitting device, the crystallinity of the secondregions being worse than the crystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A twelfth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A thirteenth aspect of the present invention is a method for producing asemiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce the semiconductor device, the second average dislocation densitybeing greater than the first average dislocation density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A fourteenth aspect of the present invention is a semiconductor devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A fifteenth aspect of the present invention is a method for producing asemiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce thesemiconductor device, the second average defect density being greaterthan the first average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A sixteenth aspect of the present invention is a semiconductor devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density, the second averagedefect density being greater than the first average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventeenth aspect of the present invention is a method for producinga semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce thesemiconductor device, the crystallinity of the second regions beingworse than the crystallinity of the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighteenth aspect of the present invention is a semiconductor devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal, the crystallinity of thesecond regions being worse than the crystallinity of the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A nineteenth aspect of the present invention is a method for producing astructured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce the structured substrate,the second average dislocation density being greater than the firstaverage dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twentieth aspect of the present invention is a structured substratecomprising a semiconductor substrate on which a plurality of secondregions made of a crystal having a second average dislocation densityare regularly arranged in a first region made of a crystal having afirst average dislocation density, the second average dislocationdensity being greater than the first average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twenty first aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce the structured substrate, the secondaverage defect density being greater than the first average defectdensity,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twenty second aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average defect densityare regularly arranged in a first region made of a crystal having afirst average defect density, the second average defect density beinggreater than the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twenty third aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce the structured substrate, the crystallinity ofthe second regions being worse than the crystallinity of the firstregion,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twenty fourth aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal are regularly arranged in a firstregion made of a crystal, the crystallinity of the second regions beingworse than the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A twenty fifth aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce the semiconductor lightemitting device, the second average dislocation density being greaterthan the first average dislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A twenty sixth aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal having a second averagedislocation density are regularly arranged in a first region made of acrystal having a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A twenty seventh aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce the semiconductor light emitting device,the second average defect density being greater than the first averagedefect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A twenty eighth aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal having a second averagedefect density are regularly arranged in a first region made of acrystal having a first average defect density, the second average defectdensity being greater than the first average defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A twenty ninth aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce the semiconductor light emitting device, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A thirty aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal are regularly arranged ina first region made of a crystal, the crystallinity of the secondregions being worse than the crystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A thirty first aspect of the present invention is a method for producinga semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce the semiconductor device,the second average dislocation density being greater than the firstaverage dislocation density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A thirty second aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average dislocationdensity are regularly arranged in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A thirty third aspect of the present invention is a method for producinga semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce the semiconductor device, the secondaverage defect density being greater than the first average defectdensity,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A thirty fourth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average defect densityare regularly arranged in a first region made of a crystal having afirst average defect density, the second average defect density beinggreater than the first average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A thirty fifth aspect of the present invention is a method for producinga semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce the semiconductor device, the crystallinity ofthe second regions being worse than the crystallinity of the firstregion,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A thirty sixth aspect of the present invention is a semiconductor devicecomprising a semiconductor substrate on which a plurality of secondregions made of a crystal are regularly arranged in a first region madeof a crystal, the crystallinity of the second regions being worse thanthe crystallinity of the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

According to the nineteenth aspect to thirty sixth aspect of the presentinvention, the material of the semiconductor substrate or thesemiconductor layer is a nitride type III-V group compoundsemiconductor, another semiconductor having a wurtzit structure, moregenerally a hexagonal crystal structure for example ZnO, α-ZnS, α-CdS,or α-CdSe, or various types of semiconductors having other crystalstructures.

A thirty seventh aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density so as to produce the structured substrate, thesecond average dislocation density being greater than the first averagedislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A thirty eighth aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density, the second average dislocation densitybeing greater than the first average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A thirty ninth aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect densityso as to produce the structured substrate, the second average defectdensity being greater than the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fortieth aspect of the present invention is a structured substratecomprising a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect density,the second average defect density being greater than the first averagedefect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A forty first aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal so asto produce the structured substrate, the crystallinity of the secondregions being worse than the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A forty second aspect of the present invention is a structured substratecomprising a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A forty third aspect of the present invention is a method for producinga device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density so as to produce the device, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the device has an active region that does not pass through anyone of the second regions.

A forty fourth aspect of the present invention is a device comprising asubstrate on which a plurality of second regions made of a crystalhaving a second average dislocation density are regularly arranged in afirst region made of a crystal having a first average dislocationdensity, the second average dislocation density being greater than thefirst average dislocation density,

wherein the device has an active region that does not pass through anyone of the second regions.

A forty fifth aspect of the present invention is a method for producinga device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect densityso as to produce the device, the second average defect density beinggreater than the first average defect density,

wherein the device has an active region that does not pass through anyone of the second regions.

A forty sixth aspect of the present invention is a device comprising asubstrate on which a plurality of second regions made of a crystalhaving a second average defect density are regularly arranged in a firstregion made of a crystal having a first average defect density, thesecond average defect density being greater than the first averagedefect density,

wherein the device has an active region that does not pass through anyone of the second regions.

A forty seventh aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal so asto produce the device, the crystallinity of the second regions beingworse than the crystallinity of the first region,

wherein the device has an active region that does not pass through anyone of the second regions.

A forty eighth aspect of the present invention is a device comprising asubstrate on which a plurality of second regions made of a crystal areregularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the device has an active region that does not pass through anyone of the second regions.

According to the forty third aspect to forty eighth aspect of thepresent invention, the device is a semiconductor device (for example, alight emitting device, a photo detector, or an electron travelingdevice), a piezoelectric device, an electricity collecting device, anoptical device (for example, a secondary higher harmonic wave generatingdevice), a dielectric device (including a ferrodielectric device), asuperconductive device, or the like. In this case, as the material ofthe substrate or layer, the foregoing various types of semiconductorscan be used. As the material of a piezoelectric device, an electricitycollecting device, an optical device, a dielectric device, or asuperconductive device, various types of materials (for example, anoxide) can be used. As the material of the oxide, many types ofmaterials for example disclosed in Journal of the Society of Japan, Vol.103, No. 11 (1995), pp. 1099-1111 and Materials Science and Engineering,B41 (1996) pp. 166-173 can be used.

A forty ninth aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce a structured substrate, the second average dislocation densitybeing greater than the first average dislocation density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fiftieth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty first aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce astructured substrate, the second average defect density being greaterthan the first average defect density, the second regions being arrangedat a first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty second aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density, the second averagedefect density being greater than the first average defect density, thesecond regions being arranged at a first interval in a first directionand at a second interval in a second direction perpendicular to thefirst direction, the second interval being smaller than the firstinterval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty third aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce astructured substrate, the crystallinity of the second regions beingworse than the crystallinity of the first region, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty fourth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal, the crystallinity of thesecond regions being worse than the crystallinity of the first region,the second regions being arranged at a first interval in a firstdirection and at a second interval in a second direction perpendicularto the first direction, the second interval being smaller than the firstinterval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty fifth aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density so as to produce a structuredsubstrate, the second average dislocation density being greater than thefirst average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty sixth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty seventh aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average defect density are regularlyarranged in parallel in a first region made of a crystal having a firstaverage defect density so as to produce a structured substrate, thesecond average defect density being greater than the first averagedefect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty eighth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal having a second average defect density are regularlyarranged in parallel in a first region made of a crystal having a firstaverage defect density, the second average defect density being greaterthan the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A fifty ninth aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal are regularly arranged in parallel in a first regionmade of a crystal so as to produce a structured substrate, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A sixtieth aspect of the present invention is a structured substratecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal are regularly arranged in parallel in a first regionmade of a crystal, the crystallinity of the second regions being worsethan the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A sixty first aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce a semiconductor light emitting device, the second averagedislocation density being greater than the first average dislocationdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty second aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty third aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce asemiconductor light emitting device, the second average defect densitybeing greater than the first average defect density, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty fourth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect density,the second average defect density being greater than the first averagedefect density, the second regions being arranged at a first interval ina first direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty fifth aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce asemiconductor light emitting device, the crystallinity of the secondregions being worse than the crystallinity of the first region, thesecond regions being arranged at a first interval in a first directionand at a second interval in a second direction perpendicular to thefirst direction, the second interval being smaller than the firstinterval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty sixth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty seventh aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density so as to produce asemiconductor light emitting device, the second average dislocationdensity being greater than the first average dislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty eighth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal having a second averagedislocation density are regularly arranged in parallel in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A sixty ninth aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average defect density are regularlyarranged in parallel in a first region made of a crystal having a firstaverage defect density so as to produce a semiconductor light emittingdevice, the second average defect density being greater than the firstaverage defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A seventieth aspect of the present invention is a semiconductor lightemitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal having a second averagedefect density are regularly arranged in parallel in a first region madeof a crystal having a first average defect density, the second averagedefect density being greater than the first average defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A seventy first aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal are regularly arranged in parallel in a first regionmade of a crystal so as to produce a semiconductor light emittingdevice, the crystallinity of the second regions being worse than thecrystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A seventy second aspect of the present invention is a semiconductorlight emitting device comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal are regularly arranged inparallel in a first region made of a crystal, the crystallinity of thesecond regions being worse than the crystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A seventy third aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density so as toproduce a semiconductor device, the second average dislocation densitybeing greater than the first average dislocation density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy fourth aspect of the present invention is a semiconductordevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions made of a crystalhaving a second average dislocation density are regularly arranged in afirst region made of a crystal having a first average dislocationdensity, the second average dislocation density being greater than thefirst average dislocation density, the second regions being arranged ata first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy fifth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal having a secondaverage defect density are regularly arranged in a first region made ofa crystal having a first average defect density so as to produce asemiconductor device, the second average defect density being greaterthan the first average defect density, the second regions being arrangedat a first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy sixth aspect of the present invention is a semiconductordevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions made of a crystalhaving a second average defect density are regularly arranged in a firstregion made of a crystal having a first average defect density, thesecond average defect density being greater than the first averagedefect density, the second regions being arranged at a first interval ina first direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy seventh aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions made of a crystal are regularlyarranged in a first region made of a crystal so as to produce asemiconductor device, the crystallinity of the second regions beingworse than the crystallinity of the first region, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy eighth aspect of the present invention is a semiconductordevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions made of a crystal areregularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A seventy ninth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density so as to produce asemiconductor device, the second average dislocation density beinggreater than the first average dislocation density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eightieth aspect of the present invention is a semiconductor devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighty first aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal having a second average defect density are regularlyarranged in parallel in a first region made of a crystal having a firstaverage defect density so as to produce a semiconductor device, thesecond average defect density being greater than the first averagedefect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighty second aspect of the present invention is a semiconductordevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions that linearly extendand that are made of a crystal having a second average defect densityare regularly arranged in parallel in a first region made of a crystalhaving a first average defect density, the second average defect densitybeing greater than the first average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighty third aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a nitride type III-V group compound semiconductor substrate onwhich a plurality of second regions that linearly extend and that aremade of a crystal are regularly arranged in parallel in a first regionmade of a crystal so as to produce a semiconductor device, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighty fourth aspect of the present invention is a semiconductordevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions that linearly extendand that are made of a crystal are regularly arranged in parallel in afirst region made of a crystal, the crystallinity of the second regionsbeing worse than the crystallinity of the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

An eighty fifth aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce a structured substrate, thesecond average dislocation density being greater than the first averagedislocation density, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

An eighty sixth aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average dislocationdensity are regularly arranged in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

An eighty seventh aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce a structured substrate, the secondaverage defect density being greater than the first average defectdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

An eighty eighth aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average defect densityare regularly arranged in a first region made of a crystal having afirst average defect density, the second average defect density beinggreater than the first average defect density, the second regions beingarranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

An eighty ninth aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce a structured substrate, the crystallinity ofthe second regions being worse than the crystallinity of the firstregion, the second regions being arranged at a first interval in a firstdirection and at a second interval in a second direction perpendicularto the first direction, the second interval being smaller than the firstinterval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninetieth aspect of the present invention is a structured substratecomprising a semiconductor substrate on which a plurality of secondregions made of a crystal are regularly arranged in a first region madeof a crystal, the crystallinity of the second regions being worse thanthe crystallinity of the first region, the second regions being arrangedat a first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety first aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage dislocation density are regularly arranged in parallel in afirst region made of a crystal having a first average dislocationdensity so as to produce a structured substrate, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety second aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystalhaving a second average dislocation density are regularly arranged inparallel in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety third aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage defect density are regularly arranged in parallel in a firstregion made of a crystal having a first average defect density so as toproduce a structured substrate, the second average defect density beinggreater than the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety fourth aspect of the present invention is a structuredsubstrate comprising a semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystalhaving a second average defect density are regularly arranged inparallel in a first region made of a crystal having a first averagedefect density, the second average defect density being greater than thefirst average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety fifth aspect of the present invention is a method for producinga structured substrate, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal are regularlyarranged in parallel in a first region made of a crystal so as toproduce a structured substrate, the crystallinity of the second regionsbeing worse than the crystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety sixth aspect of the present invention is a structured substratecomprising a semiconductor substrate on which a plurality of secondregions that linearly extend and that are made of a crystal areregularly arranged in parallel in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A ninety seventh aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce a semiconductor lightemitting device, the second average dislocation density being greaterthan the first average dislocation density, the second regions beingarranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A ninety eighth aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal having a second averagedislocation density are regularly arranged in a first region made of acrystal having a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A ninety ninth aspect of the present invention is a method for producinga semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce a semiconductor light emitting device,the second average defect density being greater than the first averagedefect density, the second regions being arranged at a first interval ina first direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundredth aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal having a second averagedefect density are regularly arranged in a first region made of acrystal having a first average defect density, the second average defectdensity being greater than the first average defect density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred first aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce a semiconductor light emitting device, thecrystallinity of the second regions being worse than the crystallinityof the first region, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred second aspect of the present invention is a semiconductorlight emitting device comprising a semiconductor substrate on which aplurality of second regions made of a crystal are regularly arranged ina first region made of a crystal, the crystallinity of the secondregions being worse than the crystallinity of the first region, thesecond regions being arranged at a first interval in a first directionand at a second interval in a second direction perpendicular to thefirst direction, the second interval being smaller than the firstinterval,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred third aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage dislocation density are regularly arranged in parallel in afirst region made of a crystal having a first average dislocationdensity so as to produce a semiconductor light emitting device, thesecond average dislocation density being greater than the first averagedislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred fourth aspect of the present invention is a semiconductorlight emitting device comprising a semiconductor substrate on which aplurality of second regions that linearly extend and that are made of acrystal having a second average dislocation density are regularlyarranged in parallel in a first region made of a crystal having a firstaverage dislocation density, the second average dislocation densitybeing greater than the first average dislocation density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred fifth aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage defect density are regularly arranged in parallel in a firstregion made of a crystal having a first average defect density so as toproduce a semiconductor light emitting device, the second average defectdensity being greater than the first average defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred sixth aspect of the present invention is a semiconductor lightemitting device comprising a semiconductor substrate on which aplurality of second regions that linearly extend and that are made of acrystal having a second average defect density are regularly arranged inparallel in a first region made of a crystal having a first averagedefect density, the second average defect density being greater than thefirst average defect density,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred seventh aspect of the present invention is a method forproducing a semiconductor light emitting device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal are regularlyarranged in parallel in a first region made of a crystal so as toproduce a semiconductor light emitting device, the crystallinity of thesecond regions being worse than the crystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred eighth aspect of the present invention is a semiconductorlight emitting device comprising a semiconductor substrate on which aplurality of second regions that linearly extend and that are made of acrystal are regularly arranged in parallel in a first region made of acrystal, the crystallinity of the second regions being worse than thecrystallinity of the first region,

wherein the semiconductor light emitting device has a light emittingregion that does not pass through any one of the second regions.

A hundred ninth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density so as to produce a semiconductor device, thesecond average dislocation density being greater than the first averagedislocation density, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred tenth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average dislocationdensity are regularly arranged in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred eleventh aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density so as to produce a semiconductor device, the secondaverage defect density being greater than the first average defectdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred twelfth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal having a second average defect densityare regularly arranged in a first region made of a crystal having afirst average defect density, the second average defect density beinggreater than the first average defect density, the second regions beingarranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred thirteenth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal so as to produce a semiconductor device, the crystallinity ofthe second regions being worse than the crystallinity of the firstregion, the second regions being arranged at a first interval in a firstdirection and at a second interval in a second direction perpendicularto the first direction, the second interval being smaller than the firstinterval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred fourteenth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions made of a crystal are regularly arranged in a firstregion made of a crystal, the crystallinity of the second regions beingworse than the crystallinity of the first region, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred fifteenth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage dislocation density are regularly arranged in parallel in afirst region made of a crystal having a first average dislocationdensity so as to produce a semiconductor device, the second averagedislocation density being greater than the first average dislocationdensity,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred sixteenth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystalhaving a second average dislocation density are regularly arranged inparallel in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred seventeenth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage defect density are regularly arranged in parallel in a firstregion made of a crystal having a first average defect density so as toproduce a semiconductor device, the second average defect density beinggreater than the first average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred eighteenth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystalhaving a second average defect density are regularly arranged inparallel in a first region made of a crystal having a first averagedefect density, the second average defect density being greater than thefirst average defect density,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred nineteenth aspect of the present invention is a method forproducing a semiconductor device, comprising the step of:

using a semiconductor substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal are regularlyarranged in parallel in a first region made of a crystal so as toproduce a semiconductor device, the crystallinity of the second regionsbeing worse than the crystallinity of the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred twentieth aspect of the present invention is a semiconductordevice comprising a semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystal areregularly arranged in parallel in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the semiconductor device has an active region that does not passthrough any one of the second regions.

A hundred twenty first aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density so as to produce a structured substrate, the secondaverage dislocation density being greater than the first averagedislocation density, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty second aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density, the second average dislocation densitybeing greater than the first average dislocation density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty third aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect densityso as to produce a structured substrate, the second average defectdensity being greater than the first average defect density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty fourth aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsmade of a crystal having a second average defect density are regularlyarranged in a first region made of a crystal having a first averagedefect density, the second average defect density being greater than thefirst average defect density, the second regions being arranged at afirst interval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty fifth aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal so asto produce a structured substrate, the crystallinity of the secondregions being worse than the crystallinity of the first region, thesecond regions being arranged at a first interval in a first directionand at a second interval in a second direction perpendicular to thefirst direction, the second interval being smaller than the firstinterval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty sixth aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsmade of a crystal are regularly arranged in a first region made of acrystal, the crystallinity of the second regions being worse than thecrystallinity of the first region, the second regions being arranged ata first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty seventh aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal having a second averagedislocation density are regularly arranged in parallel in a first regionmade of a crystal having a first average dislocation density so as toproduce a structured substrate, the second average dislocation densitybeing greater than the first average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty eighth aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage dislocation density are regularly arranged in parallel in afirst region made of a crystal having a first average dislocationdensity, the second average dislocation density being greater than thefirst average dislocation density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred twenty ninth aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal having a second average defectdensity are regularly arranged in parallel in a first region made of acrystal having a first average defect density so as to produce astructured substrate, the second average defect density being greaterthan the first average defect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred thirtieth aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal having a secondaverage defect density are regularly arranged in parallel in a firstregion made of a crystal having a first average defect density, thesecond average defect density being greater than the first averagedefect density,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred thirty first aspect of the present invention is a method forproducing a structured substrate, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal are regularly arranged in parallelin a first region made of a crystal so as to produce a structuredsubstrate, the crystallinity of the second regions being worse than thecrystallinity of the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred thirty second aspect of the present invention is a structuredsubstrate comprising a substrate on which a plurality of second regionsthat linearly extend and that are made of a crystal are regularlyarranged in parallel in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the structured substrate has a structure that does not passthrough any one of the second regions.

A hundred thirty third aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density so as to produce a device, the second averagedislocation density being greater than the first average dislocationdensity, the second regions being arranged at a first interval in afirst direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty fourth aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density, the second regionsbeing arranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty fifth aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect densityso as to produce a device, the second average defect density beinggreater than the first average defect density, the second regions beingarranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty sixth aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions made of acrystal having a second average defect density are regularly arranged ina first region made of a crystal having a first average defect density,the second average defect density being greater than the first averagedefect density, the second regions being arranged at a first interval ina first direction and at a second interval in a second directionperpendicular to the first direction, the second interval being smallerthan the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty seventh aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal so asto produce a device, the crystallinity of the second regions being worsethan the crystallinity of the first region, the second regions beingarranged at a first interval in a first direction and at a secondinterval in a second direction perpendicular to the first direction, thesecond interval being smaller than the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty eighth aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions made of acrystal are regularly arranged in a first region made of a crystal, thecrystallinity of the second regions being worse than the crystallinityof the first region, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred thirty ninth aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal having a second averagedislocation density are regularly arranged in parallel in a first regionmade of a crystal having a first average dislocation density so as toproduce a device, the second average dislocation density being greaterthan the first average dislocation density,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred fortieth aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal having a second averagedislocation density are regularly arranged in parallel in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred forty first aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal having a second average defectdensity are regularly arranged in parallel in a first region made of acrystal having a first average defect density so as to produce a device,the second average defect density being greater than the first averagedefect density,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred forty second aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal having a second averagedefect density are regularly arranged in parallel in a first region madeof a crystal having a first average defect density, the second averagedefect density being greater than the first average defect density,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred forty third aspect of the present invention is a method forproducing a device, comprising the step of:

using a substrate on which a plurality of second regions that linearlyextend and that are made of a crystal are regularly arranged in parallelin a first region made of a crystal so as to produce a device, thecrystallinity of the second regions being worse than the crystallinityof the first region,

wherein the device has an active region that does not pass through anyone of the second regions.

A hundred forty fourth aspect of the present invention is a devicecomprising a substrate on which a plurality of second regions thatlinearly extend and that are made of a crystal are regularly arranged inparallel in a first region made of a crystal, the crystallinity of thesecond regions being worse than the crystallinity of the first region,

wherein the device has an active region that does not pass through anyone of the second regions.

According to the forty ninth aspect to hundred forty fourth aspect ofthe present invention, the interval (first interval) of the secondregions in the first direction or the interval of the second regionsthat linearly extend is the same as the interval of the second regionsor the arrangement interval of the second regions according to the firstaspect of the present invention. In addition, the interval (firstinterval) of the second regions in the first direction or the intervalof the second regions that linearly extend is the same as the intervalof the second regions or the arrangement interval of the second regionsaccording to the first aspect of the present invention except that theformer is typically 50 μm or greater. According to the forty ninthaspect to fifty fourth aspect, the sixty first aspect to sixty sixthaspect, the seventy third aspect to seventy eighth aspect, the eightyfifth aspect to ninetieth aspect, the ninety seventh aspect to hundredsecond aspect, the hundred ninth aspect to hundred fourteenth aspect,the hundred twenty first aspect to hundred twenty sixth aspect, andhundred thirty third aspect to hundred thirty eighth aspect, theinterval of the second regions in the second direction can be freelyselected in the condition that the interval of the second regions issmaller than the first interval. Although the interval of the secondregions depends on the size of each of the second regions, the intervalof the second regions is generally 10 μm or greater and 1000 μm orsmaller, typically, 20 μm or greater and 200 μm or smaller. In addition,in a chip region (hereinafter referred to as device region) that isformed by scrubbing the substrate, the number of rows of second regionsin the second direction or the number of second regions that linearlyextend is substantially not greater than seven. The maximum number ofrows of second regions in the second direction or the maximum number ofsecond regions that linearly extend is seven because the device regionmay contain seven second regions depending on the relation between thenumber of rows of second regions in the second direction or the intervalof second regions that linearly extend and the chip size of the device.The number of rows of second regions in the second direction or thenumber of second regions that linearly extend of a semiconductor lightemitting device is typically three or less.

Except for the foregoing description, the description for the firstaspect to forty eighth aspect of the present invention applies to theforty ninth aspect to hundred forty fourth aspect unless that iscontrary to characteristics thereof.

According to the present invention, since a structure, for example, anactive region for a semiconductor device, or a light emitting region fora semiconductor light emitting device is formed on a nitride type III-Vgroup compound semiconductor substrate, a semiconductor substrate, or asubstrate in such a manner that the active region or the semiconductorlight emitting device does not pass through any one of the secondregions whose average dislocation density, average defect density, orcrystallinity is greater or worse than the first region, the activeregion or light emitting region can be prevented from being adverselyaffected by the second regions.

When a plurality of portions that are different from other portions inthe interval of the second regions and/or the arrangement thereof asalignment marks are formed, these alignment marks can be used toaccurately align a mask.

These and other objects, features and advantages of the presentinvention will become more apparent in light of the following detaileddescription of a best mode embodiment thereof, as illustrated in theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A and FIG. 1B are a perspective view and a sectional view,respectively, showing a GaN substrate according to a first embodiment ofthe present invention.

FIG. 2 is a plan view showing the GaN substrate according to the firstembodiment of the present invention.

FIG. 3 is a schematic diagram showing an example of a distribution ofdislocation densities near a region B of the GaN substrate according tothe first embodiment of the present invention.

FIG. 4 is a schematic diagram showing the GaN substrate according to thefirst embodiment of the present invention.

FIG. 5 is a sectional view showing a structured substrate according tothe first embodiment of the present invention.

FIG. 6 is a plan view showing another example of the GaN substrateaccording to the first embodiment of the present invention.

FIG. 7 is a sectional view describing a method for producing a GaN typesemiconductor laser according to the first embodiment of the presentinvention.

FIG. 8 is a sectional view describing a method for producing a GaN typesemiconductor laser according to the first embodiment of the presentinvention.

FIG. 9 is a plan view describing the method for producing the GaN typesemiconductor laser according to the first embodiment of the presentinvention.

FIG. 10 is a sectional view describing the method for producing the GaNtype semiconductor laser according to the first embodiment of thepresent invention.

FIG. 11A, FIG. 11B, and FIG. 11C are sectional views showing structuredsubstrates according to a second embodiment of the present invention.

FIG. 12 is a plan view showing a GaN substrate according to a thirdembodiment of the present invention.

FIG. 13 is a plan view showing the GaN substrate according to the thirdembodiment of the present invention.

FIG. 14 is a plan view describing a method for producing a GaN typesemiconductor laser according to a fourth embodiment of the presentinvention.

FIG. 15 is a plan view describing a method for producing the GaN typesemiconductor laser according to fourth embodiment of the presentinvention.

FIG. 16 is a plan view describing a method for producing a GaN typesemiconductor laser according to a fifth embodiment of the presentinvention.

FIG. 17 is a plan view describing a method for producing a GaN typesemiconductor laser according to a sixth embodiment of the presentinvention.

FIG. 18 is a plan view describing a method for producing a GaN typesemiconductor laser according to a seventh embodiment of the presentinvention.

FIG. 19 is a plan view describing a method for producing a GaN typesemiconductor laser according to an eighth embodiment of the presentinvention.

FIG. 20 is a plan view describing a method for producing a GaN typesemiconductor laser according to a ninth embodiment of the presentinvention.

FIG. 21 is a plan view describing a method for producing a GaN typesemiconductor laser according to a tenth embodiment of the presentinvention.

FIG. 22 is a plan view describing a method for producing a GaN typesemiconductor laser according to an eleventh embodiment of the presentinvention.

FIG. 23 is a plan view describing the method for producing the GaN typesemiconductor laser according to the eleventh embodiment of the presentinvention.

FIG. 24 is a plan view describing a method for producing a GaN typesemiconductor laser according to a twelfth embodiment of the presentinvention.

FIG. 25 is a plan view describing a method for producing a GaN typesemiconductor laser according to a thirteenth embodiment of the presentinvention.

FIG. 26 is a plan view describing a method for producing a GaN typesemiconductor laser according to a fourteenth embodiment of the presentinvention.

FIG. 27 is a plan view describing a method for producing a GaN typesemiconductor laser according to a fifteenth embodiment of the presentinvention.

FIG. 28 is a plan view describing a method for producing a GaN typesemiconductor laser according to a sixteenth embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Next, with reference to the accompanying drawings, embodiments of thepresent invention will be described.

First Embodiment

FIG. 1A, FIG. 1B, and FIG. 2 show a GaN substrate 1 according to a firstembodiment of the present invention. FIG. 1A is a perspective viewshowing the GaN substrate 1. FIG. 1B is a sectional view showing regionsB in the most adjacent direction of the GaN substrate 1. FIG. 2 is aplan view showing the GaN substrate 1. The GaN substrate 1 is made of ann-type transistor and has a (0001) plane (C plane) orientation. However,the GaN substrate 1 may have an R plane orientation, an A planeorientation, or an M plane orientation. The GaN substrate 1 has a regionA and regions B. The region A is made of a crystal having a low averagedislocation density. The regions B are made of a crystal having a highaverage dislocation density. The regions B are periodically arranged inthe region A in a hexagonal lattice shape. It can be said that each ofthe regions B is arranged at a vertex of a closest-packed regulartriangle. The regions B generally have an irregular polygonal prismshape. For simplicity, FIG. 1A shows the regions B in a cylinder shape(this applies to the description that follows). In this case, a straightline that connects the most adjacent regions B accords with a <11-20>direction of GaN and its equivalent direction. A direction perpendicularto the straight line accords with a <1-100> direction of GaN and itsequivalent direction. Alternatively, the straight line that connects themost adjacent regions B may accord with a <1-100> direction of GaN andits equivalent direction. The direction perpendicular to the straightline may accord with the <11-20> direction and its equivalent direction.The regions B pierce the GaN substrate 1. The thickness of the GaNsubstrate 1 is for example in the range from 200 to 600 μm. In FIG. 2,dotted lines represent only relative relations of the regions B, notreal (physical) lines (this applies to the description that follows).

The arrangement period of the regions B (for example, the intervalbetween the centers of the most adjacent regions B) is for example 400μm and the diameter thereof is for example 20 μm. The averagedislocation density of the region A is for example 2×10⁶ cm⁻². Theaverage dislocation density of each of the regions B is for example1×10⁸ cm⁻². FIG. 3 shows an example of a distribution of dislocationdensities in the radius direction from the center of each of the regionB.

The GaN substrate 1 can be produced by a crystal growing technology asfollows.

The GaN substrate 1 is produced by the following crystal growingmechanism. A crystal is grown on a facet plane that is an inclinedplane. The crystal is continuously grown on the inclined facet plane soas to propagate dislocations and gather them to a predeterminedposition. The region in which the crystal has been grown on the facetplane and from which dislocations have been propagated becomes a lowdensity defect region. At a lower portion of the inclined facet plane,the crystal is grown and becomes a high density defect region having aclear boundary. The dislocations gather at the boundary of the highdensity defect region or the inside thereof. As a result, thedislocations disappear or stay at the boundary of the high densitydefect region or the inside thereof.

The shape of the facet plane depends on the shape of the high densitydefect region. When the defect region is formed in a dot shape, thefacet plane surrounds the bottom of the dot and forms a pit. When thedefect region is formed in a stripe shape, the facet plane is formed ina triangular prism shape of which the stripe is placed at the bottom andinclined facet planes are placed on both the sides of the stripe.

Thereafter, the front surface of the grown layer is ground and abraded.As a result, the front surface of the grown layer is smoothened so thatthe GaN substrate 1 can be used as a substrate.

The foregoing high density defect region may have several states. Forexample, the high density defect region may be made of a polycrystal.Alternatively, the high density defect region may be made of a singlecrystal that is slightly inclined against the adjacent low densitydefect region. Alternatively, the high density defect region may have aninverted C axis against the adjacent low density defect region. Thus,since the high density defect region has a clear boundary against thelow density defect region, they are distinguished from each other.

With the high density defect region, the crystal can be continuouslygrown while the adjacent facet plane is kept, not buried.

To form the high density defect region, a seed thereof is pre-formed.The seed is for example a layer of an amorphous substance or a layer ofa polycrystal. By growing a crystal of GaN on the seed, the high densitydefect region can be formed in the region of the seed.

The GaN substrate 1 can be practically produced in the following manner.First of all, a base substrate is prepared. As the base substrate,various types of substrates can be used. Although a sapphire substratemay be used, since it is not easily removed at a later step, it ispreferable to use a GaAs substrate that can be easily removed.Thereafter, a seed made of for example a SiO₂ film is formed on the basesubstrate. The seed can be formed in a dot shape or a stripe shape. Manyseeds can be regularly formed. More practically, in this case, seeds areformed in accordance with the arrangement of the regions B shown in FIG.2. Thereafter, GaN is grown as a thick film by for example hydride vaporphase expitaxy (HVPE). After GaN is grown, a facet plane is formed inaccordance with a pattern of seeds. When seeds are formed in a dotshaped pattern according to the first embodiment, pits composed of thefacet plane are regularly formed. In contrast, when seeds are formed ina stripe shaped pattern, a prism shaped facet plane is formed.

Thereafter, the base substrate is removed. The thick film layer of GaNis ground and abraded so as to flatten the front surface thereof. As aresult, the GaN substrate 1 can be produced. The thickness of the GaNsubstrate 1 can be freely designated.

The GaN substrate 1 produced in the foregoing manner has a principalplane that is the C plane. On the principal plane, a dot shaped (orstripe shaped) high density defect region that has a predetermined size,namely regions B, are regularly formed. The dislocation density of thesingle crystal region other than the regions B, namely the region A, islower than that of the regions B.

As shown in FIG. 4, the interval between the most adjacent regions B isdenoted by 2 a and the diameter of each region B is denoted by A₀.

FIG. 5 shows an example of a structured substrate using the GaNsubstrate 1. Ridges R are formed at an interval b on the principal planeof the GaN substrate 1. The ridges R each have a width W and extend in adirection <1-100>. This structure can be formed by selectively etchingthe principal plane of the GaN substrate 1. The ridges R may be formedon the GaN substrate 1 as a bulk substrate or on a GaN typesemiconductor laser grown on the GaN substrate 1. In the former, forexample the ridges R may be used as device regions. In other words, adevice structure, for example, a GaN type semiconductor layer that formsa laser structure, is grown on a ridge R. As a result, a laser device isformed. In the latter case, a GaN type semiconductor laser that forms alaser structure is grown on the GaN substrate 1. A ridge R that becomesa laser stripe portion is formed on the top of the GaN typesemiconductor laser. This point will be practically described later.FIG. 5 shows an example of which a ridge R has a rectangular section.However, the shape of the section of a ridge R is not limited to arectangle, but any other shapes (for example, a triangle).

When the direction in which the ridges R extend and the arrangementdirection of the regions B are the <1-100> direction and the ridges Rare periodically formed in the direction, the relative positions of theregions B and the ridges R can be regularly designated on the surface ofthe substrate.

When the relations of b≧a and b=na (where n represents any naturalnumber) are satisfied, since the periodicity can be also obtained in a<11-20> direction, the same relation of positions of the regions B andthe ridges R can be obtained anywhere on the surface of the substrate.When a device is formed at the top of a ridge R that is formed at aposition of a region A, not a region B, the device has a goodreliability. When a device is formed at the bottom of a ridge R, theactive region of the device can be positioned in a region A, which is ahigh crystal quality region.

When the relations of b≦a and a=nb (where n is any natural number) aresatisfied, the periodicity can be also obtained in the <1-20> direction.As a simple theory, when the relation of A₀<a−W where A₀ represents thediameter of a region B and w represents the width of a ridge R, theridge can be formed in such a manner that it does not pass through thetop of any region B on all the surface of the substrate.

Even if ridges R cannot be formed in the region A on all the surface ofthe substrate, when the foregoing relation (a=nb) is satisfied, inparticular, n is as small as 2 or 3, many good devices can beperiodically formed in comparison with any arrangement or any relationof a and b.

The case that the regions B are periodically arranged in the region A onthe GaN substrate 1 has been described. As shown in FIG. 6, there may bea region C between a region A and a region B, where the averagedislocation density (for example, around 1×10⁷ cm⁻²) of the region C isin the middle of the average dislocation density of the region A and theaverage dislocation density of the region B. In this case, like theforegoing description, ridges R should not pass through the regions B.To form good devices, it is preferred to form ridges R so that they donot pass through the regions B and regions C. Even if a region C islarge and a ridge R cannot be formed in a region A on all the surface ofthe substrate, when the foregoing relation (a=nb) is satisfied, inparticular, n is as small as 2 or 3, many good devices can beperiodically formed in comparison with any arrangement or any relationof a and b.

Next, an example of a GaN type semiconductor laser according to thefirst embodiment will be described. The GaN type semiconductor laser hasa ridge structure and a separate confinement hetero-structure.

As shown in FIG. 7, the front surface of the GaN substrate 1 is cleanedby thermal cleaning or the like. Thereafter, an n-type GaN buffer layer5, an n-type AlGaN clad layer 6, an n-type GaN optical waveguide layer7, an undoped Ga_(1-x)In_(x)N/Ga_(1-y)In_(y)N multiple quantum wellstructure active layer 8, an undoped InGaN deterioration protectionlayer 9, a p-type AlGaN cap layer 10, a p-type GaN optical waveguidelayer 11, a p-type AlGaN clad layer 12, and a p-type GaN contact layer13 are epitaxially grown on the front surface of the GaN substrate 1 bythe MOCVD method.

The thickness of the n-type GaN buffer layer 5 is for example 0.05 μm.For example, Si is doped as n-type impurities in the n-type GaN bufferlayer 5. The thickness of the n-type AlGaN clad layer 6 is for example1.0 μm. For example, Si is doped as n-type impurities in the n-typeAlGaN clad layer 6. The composition of Al of the n-type AlGaN clad layer6 is for example 0.08. The thickness of the n-type GaN optical waveguidelayer 7 is for example 0.1 μm. For example, Si is doped as n-typeimpurities in the n-type GaN optical waveguide layer 7. The undopedGa_(1-x)In_(x)N/Ga_(1-y)In_(y)N multiple quantum well structure activelayer 8 has an In_(x)Ga_(1-x)N layer as a well layer and anIn_(y)Ga_(1-y)N layer as a barrier layer. The In_(x)Ga_(1-x)N layer hasa thickness of 3.5 nm. x of In_(x)Ga_(1-x)N is 0.14. The In_(y)Ga_(1-y)Nlayer has a thickness of 7 nm. y of In_(y)Ga_(1-y)N is 0.02. TheIn_(y)Ga_(1-y)N layer has three wells.

The undoped InGaN deterioration protection layer 9 has a gratedstructure of which the In composition gradually decreases from the planethat is in contact with the active layer 8 to the plane that is incontact with the undoped InGaN deterioration protection layer 9. Thecomposition of In of the plane that is in contact with the active layer8 accords with the composition y of In of the In_(y)Ga_(1-y)N layer asthe barrier layer of the active layer 8. The composition of In of theplane that is in contact with the p-type AlGaN cap layer 10 is 0. Thethickness of the undoped InGaN deterioration protection layer 9 is forexample 20 nm.

The thickness of the p-type AlGaN cap layer 10 is for example 10 nm. Forexample, magnesium (Mg) is doped as p-type impurities in the p-typeAlGaN cap layer 10. The composition of Al of the p-type AlGaN cap layer10 is for example 0.2. The p-type AlGaN cap layer 10 prevents In frombeing removed from the active layer 8 and it from deteriorating when thep-type GaN optical waveguide layer 11, the p-type AlGaN clad layer 12,and the p-type GaN contact layer 13 are grown. In addition, the p-typeAlGaN cap layer 10 prevents carriers (electrons) from overflowing fromthe active layer 8. The thickness of the p-type GaN optical waveguidelayer 11 is for example 0.1 μm. For example, Mg is doped as p-typeimpurities in the p-type GaN optical waveguide layer 11. The thicknessof the p-type AlGaN clad layer 12 is for example 0.5 μm. For example, Mgis doped as p-type impurities in the p-type AlGaN clad layer 12. Thecomposition of Al of the p-type AlGaN clad layer 12 is for example 0.08.The thickness of the p-type GaN contact layer 13 is for example 0.1 μm.For example, Mg is doped as p-type impurities in the p-type GaN contactlayer 13.

The growing temperatures of the n-type GaN buffer layer 5, the n-typeAlGaN clad layer 6, the n-type GaN optical waveguide layer 7, the p-typeAlGaN cap layer 10, the p-type GaN optical waveguide layer 11, thep-type AlGaN clad layer 12, and the p-type GaN contact layer 13, whichdo not contain In, are for example around 1000° C. The growingtemperature of the Ga_(1-x)In_(x)N/Ga_(1-y)In_(y)N multiple quantum wellstructure active layer 8, which contains In, is for example in the rangefrom 700 to 800° C., preferably for example 730° C. The growingtemperature at which the undoped InGaN deterioration protection layer 9starts growing is set to for example 730° C., which is the same as thegrowing temperature of the active layer 8. Thereafter, the temperatureof the undoped InGaN deterioration protection layer 9 is linearlyraised. The temperature at which the undoped InGaN deteriorationprotection layer 9 ends growing is set to for example 835° C., which isthe same as the growing temperature of the p-type AlGaN cap layer 10.

With respect to growing materials of the GaN type semiconductor layer,as a material of Ga, trimethyl gallium ((CH₃)₃Ga, TMG) is used; as amaterial of Al, trimethyl aluminum ((CH₃)₃Al, TMA) is used; as amaterial of In, trimethyl indium ((CH₃)₃In, TMI) is used; as a materialof N, NH₃ is used. As a carrier gas, for example H₂ is used. Withrespect to dopants, as an n-type dopant, for example mono-silane (SiH₄)is used. As a p-type dopant, for example bis=(methylcyclopentyl)magnesium ((CH₃C₅H₄)₂Mg) or bis=(cyclopentyl) magnesium ((C₅H₅)₂Mg) isused.

Thereafter, the GaN substrate 1 on which the GaN type semiconductorlayer has been grown in the foregoing manner is removed from the MOCVDapparatus. Thereafter, an SiO₂ film (not shown) is formed for athickness of for example 0.1 μm on all the surface of the p-type contactlayer 13 by the CVD method, vacuum evaporating method, spattering methodor the like. Thereafter, a resist pattern (not shown) is formed in apredetermined shape in accordance with the shape of the ridge portion onthe SiO₂ film by lithography. With a mask of the resist pattern, theSiO₂ film is etched by a wet-etching method using for examplehydrochloric acid type etching solution or the RIE method using anetching gas containing fluorine for example CF₄ or CHF₃.

Next, with a mask of the SiO₂ film, the p-type AlGaN clad layer 12 isetched for a predetermined thickness by the RIE method. As a result, asshown in FIG. 8, a ridge 14 that extends in a <1-100> direction isformed. The width of the ridge 14 is for example 3 μm. As an etching gasfor the RIE, for example a chlorine type gas is used.

Thereafter, the SiO₂ film as the etching mask is etched out. Thereafter,an insulation film 15 such as a SiO₂ film having a thickness of forexample 0.3 μm is formed on all the surface of the substrate by the CVDmethod, vacuum evaporating method, spattering method, or the like. Theinsulation film 15 serves to electrically insulate the substrate andprotect the front surface of the substrate.

Thereafter, a resist pattern (not shown) that covers the front surfaceof the insulation film 15 excluding a p-type electrode forming region isformed by lithography.

Thereafter, with a mask of the resist pattern, the insulation film 15 isetched. As a result, an opening 15 a is formed.

While the resist pattern is left, for example a Pd film, a Pt film, andan Au film are successively formed on all the surface of the substrateby the vacuum evaporating method. Thereafter, the resist pattern isremoved from the substrate along with the Pd film, the Pt film, and theAu film formed on the resist pattern (lift-off process). As a result, ap-side electrode 16 that is in contact with the p-type contact layer 13through the opening 15 a of the insulation film 15 is formed. Thethicknesses of the Pd film, the Pt film, and the Au film that composethe p-type electrode 16 are for example 10 nm, 100 nm, and 300 nm,respectively. Thereafter, an alloy process is performed for thesubstrate so as to ohmic-contact the p-side electrode 16 thereto.

Thereafter, for example a Ti film, a Pt film, and an Au film aresuccessively formed on the rear surface of the GaN substrate 1 by forexample vacuum evaporating method. As a result, an n-side electrode 17having a Ti/Pt/Au structure is formed. The thicknesses of the Ti film,the Pt film, and the Au film that compose the n-side electrode 17 arefor example 10 nm, 50 nm, and 100 nm, respectively. Thereafter, an alloyprocess is performed for the substrate so as to ohmic-contact the n-sideelectrode 17 thereto.

Thereafter, as shown in FIG. 9, the GaN substrate 1 on which theforegoing laser structure has been formed is scrubbed, for example,cleaved, along the contour lines of a device region 2 (one sectionsurrounded by thick lines). As a result, a laser bar 4 having end planesof a resonator is formed. The end planes of the resonator are coated.Thereafter, the laser bar 4 is scrubbed, for example, cleaved, so as toobtain a chip.

In FIG. 9, one gray rectangle represents a GaN type semiconductor laser.A straight line drawn near the center of the gray rectangle represents aridge 14, namely, a laser stripe 3. The ridge 14 accords with theposition of a light emitting region. In addition, a rectangleillustrated by broken lines represents the laser bar 4. Longer sides ofthe laser bar 4 accord with the end planes of the resonator.

In the example shown in FIG. 9, the size of the GaN type semiconductorlaser is for example 600 μm×346 μm. The substrate is scrubbed in thelateral direction (longer side direction) along a straight line thatconnects the regions B and in the lengthwise direction (shorter sidedirection) along a straight line that does not pass through the regionsB. As a result, a GaN type semiconductor laser of the size is separatedfrom the substrate.

In this case, since the regions B exist on the end planes of the longersides of each GaN type semiconductor laser, when a device is designed sothat the laser stripe 3 is positioned near a straight line that connectsthe center points of the shorter sides of the laser stripe 3, the lightemitting region can be prevented from being affected by the regions B.

By scrubbing, for example, cleaving, the substrate along the straightline in the lengthwise direction shown in FIG. 9, mirrors of theresonator are formed on the end planes. Since the straight line does notpass through the regions B, the mirrors are not adversely affected bydislocations of the regions B. Thus, a GaN type semiconductor laserhaving good light emitting characteristics and good reliability can beobtained.

Thus, as shown in FIG. 10, a GaN type semiconductor laser having desiredridge structure and SCH structure is produced.

As described above, according to the first embodiment, a GaN typesemiconductor layer that forms a laser structure is grown on the GaNsubstrate 1 of which the regions B having a high average dislocationdensity are periodically arranged in a hexagonal lattice shape in theregion A having a low average dislocation density. A ridge 14 is formedon the p-type GaN contact layer 13 and the p-type AlGaN clad layer 12 sothat the ridge 14 does not pass through any one of regions B. As aresult, the light emitting region of the GaN type semiconductor lasercan be prevented from being adversely affected by the regions B. Thus, aGaN type semiconductor laser that has good light emittingcharacteristics, good reliability, and long life can be accomplished.

In addition, according to the first embodiment, the undoped InGaNdeterioration protection layer 9 is disposed adjacent to the activelayer 8. In addition, the p-type AlGaN cap layer 10 is disposed adjacentto the undoped InGaN deterioration protection layer 9. Thus, the undopedInGaN deterioration protection layer 9 can remarkably suppress a stressthat takes place on the active layer 8 by the p-type AlGaN cap layer 10.In addition, the undoped InGaN deterioration protection layer 9 caneffectively prevent Mg as a p-type dopant of a p-type layer fromdiffusing in the active layer 8.

Second Embodiment

Next, a second embodiment of the present invention will be described.

In the first embodiment, a structured substrate, which is unsmoothlyformed, was described. The front surface of the structured substrate maybe partly coated with a pattern made of an insulation film or the like.According to the second embodiment, a structured substrate of which amask grown by the ELO, namely an ELO pattern, is formed on a GaNsubstrate 1 will be described.

FIG. 11A, FIG. 11B, and FIG. 11C show three examples of structuredsubstrates. FIG. 11A shows an example of which an ELO pattern made of aninsulation film 18 such as a SiO₂ film is formed in a stripe shape thatextends in a <1-100> direction in such a manner that the insulation film18 coats a region B on the principal plane of the GaN substrate 1. Withthe insulation film 18 as a mask, an upper portion of the GaN substrate1 is etched for a predetermined depth. In this case, as with the firstembodiment, the arrangement direction of the region B is matched withthe direction in which the ELO pattern extends and the relation of a =nbis satisfied. In the example shown in FIG. 11B, an upper portion of theGaN substrate 1 is formed in a stripe shape that extends in the <1-100>direction. An insulation film 18 such as a SiO₂ film is formed on theGaN substrate 1 in such a manner that the insulation film 18 coats theregion B. In this case, as with the first embodiment, the arrangementdirection of the region B is matched with the direction in which the ELOpattern extends and the relation of a =nb is satisfied. In the exampleshown in FIG. 1C, a insulation film 18 such as a SiO₂ film that has anopening in a stripe shape that extends in the <1-100> direction isformed on the principal plane of the GaN substrate 1 in such a mannerthat the insulation film 18 coats the region B. In this case, as withthe first embodiment, the arrangement direction of the region B ismatched with the direction in which the ELO pattern extends and therelation of a =nb is satisfied.

In the examples shown in FIG. 11A, FIG. 11B, and FIG. 11C, when therelation of A₁≧A₀ is satisfied where A₀ represents the diameter of theregion B and A₁ represents the width of the ELO pattern, the region Bcan be formed below the insulation film 18 on all the surface of thesubstrate. When a GaN type semiconductor layer is laterally grown by theELO on the structured substrate, in accordance with the theory of theELO, since crystal defects of the region B do not propagate to a growthlayer that is coated with the insulation film 18, a good GaN typesemiconductor layer can be grown on all the surface of the substrate.

When there is a relation of A₁≦A₀, all the surface of the region Bcannot be coated with the insulation film 18. However, in comparisonwith the case that the insulation film 18 is formed at any position onthe GaN substrate 1, the crystal quality of the growth layer can beimproved.

The period b of the ELO patterns is generally around several to 20 μmand the period 2 a of the regions B is generally around 100 to 1000 μm.Because of these relations, although the case of b=na is not shown, whenthere were an ELO pattern that satisfies them, it would be included.

When a GaN type semiconductor laser according to the first embodiment isproduced with the structured substrate, an n-type GaN layer is grown fora sufficient thickness on for example one of the structured substratesshown in FIG. 11A, FIG. 11B, and FIG. 11C by the ELO. Thereafter, a GaNtype semiconductor layer that forms a laser structure is grown on then-type GaN layer.

Except for the foregoing portion, the second embodiment is the same asthe first embodiment. Thus, the description of the other portions of thesecond embodiment is omitted.

According to the second embodiment, the same advantage as the firstembodiment can be obtained.

Third Embodiment

Next, a third embodiment of the present invention will be described.

According to the first embodiment and the second embodiment, a region Bof the GaN substrate 1 is arranged at the vertex of a closest-packedregular triangle.

When a structured substrate is produced or a device is formed thereon, astructure or device should be patterned in such a manner that theorientation thereof accords with the arrangement of the regions B. Thepatterning process includes a resist exposing step. When the resist isexposed, an alignment mark is required to align a mask. Thus, accordingto the third embodiment, an alignment mark forming method and a maskaligning method will be described.

In other words, since the GaN substrate 1 is transparent, a boundary ofa seed crystal as a source of a region B and a bulk growth layer can bevisually observed through the GaN substrate 1 by an optical microscopeor the like. The arrangement of the region B can be detected from theoutside. Thus, using the region B, the mask can be aligned.

However, when regions B are periodically formed on all the surface ofthe substrate, the orientation of a straight line that connects theregions B may be mistakenly obtained. Thus, regions B that deviate byfor example one row may be selected.

Thus, according to the third embodiment, as shown in FIG. 12, theregions B are not periodically arranged on all the surface of the GaNsubstrate 1. For example, the interval of regions B of a particular rowis halved for a predetermined length (the density of regions B isdoubled). This portion is used as an alignment mark 19 that representsan orientation. In FIG. 12, regions B that have been added to theexample shown in FIG. 2 are represented by arrows.

When the GaN substrate 1 is grown from a crystal seed, if the intervalof regions B is too large, grown layers do not properly combine.However, when the interval of regions B of a particular row is narrowedas shown in FIG. 12, such a problem does not take place.

Alignment marks 19 as shown in FIG. 12 are formed at a plurality of (forexample, five) positions on the GaN substrate 1.

When a resist is exposed in a patterning process for a structuredsubstrate or a device that is formed thereon, a mask can be accuratelyaligned with the alignment marks 19.

It is clear that the alignment marks 19 can be used for definingcoordinates of the substrate as well as aligning an orientation.

Except for the foregoing portion, the third embodiment is the same asthe first embodiment. Thus, the description of the other portions of thethird embodiment is omitted.

According to the third embodiment, in addition to the same advantage asthe first embodiment, a mask can be highly accurately aligned in anexposing step for a structured substrate and a device formed thereon.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be described.

FIG. 14 is a plan view showing a GaN substrate according to the fourthembodiment. As shown in FIG. 14, according to the fourth embodiment, adevice region 2 is confined so that regions B are not contained in alaser stripe 3. In this case, the laser stripe 3 is spaced apart fromeach of the regions B by 50 μm or greater. In this case, the deviceregion 2 contains two regions B.

Except for the foregoing portion, the fourth embodiment is the same asthe first embodiment. Thus, the description of the other portions of thefourth embodiment is omitted.

According to the fourth embodiment, the same advantage as the firstembodiment can be obtained.

Fifth Embodiment

Next, a fifth embodiment of the present invention will be described.

FIG. 15 is a plan view showing a GaN substrate according to the fifthembodiment. The GaN substrate 1 is an n-type semiconductor and has a Cplane orientation. Alternatively, the GaN substrate 1 may have an Rplane orientation, an A plane orientation, or an M plane orientation. Inthe GaN substrate 1, regions B made of a crystal having a high averagedislocation density are periodically arranged in a <11-20> direction ofGaN at an interval of for example 400 μm and at an interval of forexample 20 to 100 μm in a <1-100> direction that is perpendicular to the<11-20> direction in a region A made of a crystal having a low averagedislocation density. Alternatively, the <11-20> direction may besubstituted for the direction <1-100>.

According to the fifth embodiment, as shown in FIG. 16, a device region2 is confined so that a pair of end planes that are in parallel with alaser stripe 3 pass through a row of regions B in the <1-100> directionand that a laser stripe 3 is positioned near the center of a regionbetween two rows of the regions B. In this case, the device region 2does not substantially contain rows of the regions B.

Except for the foregoing portion, the fifth embodiment is the same asthe first embodiment. Thus, the description of the other portions of thefifth embodiment is omitted.

According to the fifth embodiment, the same advantage as the firstembodiment can be obtained.

Sixth Embodiment

Next, a sixth embodiment of the present invention will be described.

As shown in FIG. 17, according to the sixth embodiment, a GaN substrate1 that is the same as the fifth embodiment is used. However, unlike withthe fifth embodiment, one end plane that is in parallel with a laserstripe 3 passes through a row of regions B in a <1-100> direction.Another end plane passes through a position that is apart from a row ofthe regions B. In this case, a device region 2 does not substantiallycontain a row of the regions B.

Except for the foregoing portion, the sixth embodiment is the same asthe first embodiment. Thus, the description of the other portions of thesixth embodiment is omitted.

According to the sixth embodiment, the same advantage as the firstembodiment can be obtained.

Seventh Embodiment

Next, a seventh embodiment of the present invention will be described.

As shown in FIG. 18, according to the seventh embodiment, a GaNsubstrate 1 that is the same as the fifth embodiment is used. However,unlike with the fifth embodiment, according to the seventh embodiment, adevice region 2 is confined so that a pair of end planes of a laserstripe 3 are positioned between two rows of regions B in a <1-100>direction and that a laser stripe 3 is positioned near the center of aregion between the two rows of the regions B. In this case, the deviceregion 2 does not substantially contain the rows of the regions B.

Except for the foregoing portion, the seventh embodiment is the same asthe fifth embodiment and the first embodiment. Thus, the description ofthe other portions of the seventh embodiment is omitted.

According to the seventh embodiment, the same advantage as the firstembodiment can be obtained.

Eighth Embodiment

Next, an eighth embodiment of the present invention will be described.

As shown in FIG. 19, according to the eighth embodiment, a GaN substrate1 that is the same as the fifth embodiment is used. However, unlike withthe fifth embodiment, one end plane that is in parallel with a laserstripe 3 passes through a row of regions B in a <1-100> direction andthat another end plane is positioned between the adjacent two rows ofregions B and that a laser stripe 3 passes through a position spacedapart from the row of regions B through which the one end plane passesby 50 μm or greater. In this case, the device region 2 contains one rowof regions B.

Except for the foregoing portion, the eighth embodiment is the same asthe fifth embodiment and the first embodiment. Thus, the description ofthe other portions of the eighth embodiment is omitted.

According to the eighth embodiment, the same advantage as the firstembodiment can be obtained.

Ninth Embodiment

Next, a ninth embodiment of the present invention will be described.

As shown in FIG. 20, according to the ninth embodiment, a GaN substrate1 that is the same as the fifth embodiment is used. However, unlike withthe fifth embodiment, one end plane that is in parallel with a laserstripe 3 passes through a position that is apart from a row of regions Bin a <1-100> direction. Another end plane passes through a positionbetween the adjacent two rows of regions B. A laser stripe 3 passesthrough a position spaced apart from the row of regions B by 50 μm orgreater. In this case, a device region 2 contains one row of regions B.

Except for the foregoing portion, the ninth embodiment is the same asthe fifth embodiment and the first embodiment. Thus, the description ofthe other portions of the ninth embodiment is omitted.

According to the ninth embodiment, the same advantage as the firstembodiment can be obtained.

Tenth Embodiment

Next, a tenth embodiment of the present invention will be described.

FIG. 21 is a plan view showing a GaN substrate 1 according to the tenthembodiment. The GaN substrate 1 according to the tenth embodiment is thesame as the tenth embodiment except that regions B are periodicallyarranged at an interval of for example 200 μm in a <11-20> orientationof GaN. In this case, a device region 2 contains two rows of regions B.

As shown in FIG. 21, according to the tenth embodiment, a laser stripe 3is positioned near the center of adjacent rows of regions B. A pair ofend planes that are in parallel with the laser stripe 3 are positionednear the centers of regions between two adjacent rows of regions B onthe right and left of the laser stripe 3.

Except for the foregoing portion, the tenth embodiment is the same asthe fifth embodiment and the first embodiment. Thus, the description ofthe other portions of the tenth embodiment is omitted.

According to the tenth embodiment, the same advantage as the firstembodiment can be obtained.

Eleventh Embodiment

Next, an eleventh embodiment of the present invention will be described.

FIG. 22 is a plan view showing a GaN substrate according to the eleventhembodiment. The GaN substrate 1 is an n-type semiconductor and has a Cplane orientation. Alternatively, the GaN substrate 1 may have an Rplane orientation, an A plane orientation, or an M plane orientation. Inthe GaN substrate 1, regions B that are made of a crystal having a highaverage dislocation density and that linearly extend in a <1-100>direction of GaN are periodically arranged at an interval of for example400 μm in a <11-20> orientation perpendicular to the <1-100> directionin a region A made of a low average dislocation density. Alternatively,the <1-100> direction may be substituted for the <11-20> orientation.

According to the eleventh embodiment, as shown in FIG. 23, a deviceregion 2 is confined so that a pair of end planes that are in parallelwith a laser stripe 3 pass through regions B and that the laser stripe 3is positioned near the center of a region between the regions B. In thiscase, the device region 2 does not substantially contain regions B.

Except for the foregoing portion, the eleventh embodiment is the same asthe first embodiment. Thus, the description of the other portions of theeleventh embodiment is omitted.

According to the eleventh embodiment, the same advantage as the firstembodiment can be obtained.

Twelfth Embodiment

Next, a twelfth embodiment of the present invention will be described.

As shown in FIG. 24, according to the twelfth embodiment, a GaNsubstrate 1 that is the same as the eleventh embodiment is used.However, unlike with the eleventh embodiment, one end plane that is inparallel with a laser stripe 3 passes through a region B. Another endplane passes through a position apart from a region B. In this case, adevice region 2 does not substantially contain a region B.

Except for the foregoing portion, the twelfth embodiment is the same asthe eleventh embodiment and the first embodiment. Thus, the descriptionof the other portions of the twelfth embodiment is omitted.

According to the twelfth embodiment, the same advantage as the firstembodiment can be obtained.

Thirteenth Embodiment

Next, a thirteenth embodiment of the present invention will bedescribed.

As shown in FIG. 25, according to the thirteenth embodiment, a GaNsubstrate 1 that is the same as the eleventh embodiment is used.However, unlike with the eleventh embodiment, a device region 2 isconfined so that a pair of end planes that are in parallel with a laserstripe 3 are positioned between regions B. The laser stripe 3 ispositioned near the center of a region between the regions B. In thiscase, a device region 2 does not substantially contain the regions B.

Except for the foregoing portion, the thirteenth embodiment is the sameas the eleventh embodiment and the first embodiment. Thus, thedescription of the other portions of the thirteenth embodiment isomitted.

According to the thirteenth embodiment, the same advantage as the firstembodiment can be obtained.

Fourteenth Embodiment

Next, a fourteenth embodiment of the present invention will bedescribed.

As shown in FIG. 26, according to the fourteenth embodiment, a GaNsubstrate 1 that is the same as the eleventh embodiment is used.However, unlike with the eleventh embodiment, one end plane that is inparallel with a laser stripe 3 passes through a region B. Another endplane is positioned between the adjacent regions B. The laser stripe 3passes through a position apart from the region B by 50 μm or greater.In this case, a device region 2 contains one region B.

Except for the foregoing portion, the fourteenth embodiment is the sameas the eleventh embodiment and the first embodiment. Thus, thedescription of the other portions of the fourteenth embodiment isomitted.

According to the fourteenth embodiment, the same advantage as the firstembodiment can be obtained.

Fifteenth Embodiment

Next, a fifteenth embodiment of the present invention will be described.

As shown in FIG. 27, according to the fifteenth embodiment, a GaNsubstrate 1 that is the same as the eleventh embodiment is used.However, unlike with the eleventh embodiment, one end plane that is inparallel with a laser stripe 3 passes through a position apart from aregion B. Another end plane passes through a position that is placedbetween the two adjacent regions B and that is apart from the region Bby 50 μm or greater. In this case, a device region 2 contains one regionB.

Except for the foregoing portion, the fifteenth embodiment is the sameas the eleventh embodiment and the first embodiment. Thus, thedescription of the other portions of the fifteenth embodiment isomitted.

According to the fifteenth embodiment, the same advantage as the firstembodiment can be obtained.

Sixteenth Embodiment

Next, a sixteenth embodiment of the present invention will be described.

FIG. 28 is a plane view showing a GaN substrate 1 according to thesixteenth embodiment. The GaN substrate 1 according to the sixteenthembodiment is the same as the GaN substrate 1 according to the eleventhembodiment except that regions B of the GaN substrate 1 are periodicallyarranged at an interval of for example 200 μm in a <11-20> direction ofGaN. In this case, a device region 2 contains two regions B.

As shown in FIG. 28, according to the sixteenth embodiment, a laserstripe 3 is positioned near the center of a region between two adjacentregions B. A pair of end planes that are in parallel with the laserstripe 3 are positioned near the centers of regions between two adjacentregions B on the left and right of the laser stripe 3.

Except for the foregoing portion, the sixteenth embodiment is the sameas the eleventh embodiment and the first embodiment. Thus, thedescription of the other portions of the sixteenth embodiment isomitted.

According to the sixteenth embodiment, the same advantage as the firstembodiment can be obtained.

Although the present invention has been shown and described with respectto a best mode embodiment thereof, it should be understood by thoseskilled in the art that the foregoing and various other changes,omissions, and additions in the form and detail thereof may be madetherein without departing from the spirit and scope of the presentinvention.

For example, numeric values, structures, substrates, materials,processes, and so forth of the foregoing embodiments are just examples.When necessary, different numeric values, structures, substrates,materials, processes, and so forth can be used.

In reality, in the foregoing embodiments, the present invention wasapplied to a method for producing a GaN type semiconductor laser havinga SCH structure. In addition, the present invention can be also appliedto a method for producing a GaN type semiconductor laser having a doubleheterostructure (DH). Moreover, the present invention can be alsoapplied to a method for producing a GaN type light emitting diode. Inaddition, the present invention can be applied to an electron travelingdevice using a nitride type III-V group compound semiconductor such as aGaN type FET or a GaN type hetero-junction bipolar transistor (HBT).

In addition, according to the foregoing embodiments, as a carrier gaswith which a crystal is grown by the MOCVD method, H₂ gas is used. Whennecessary, another carrier gas for example a mixed gas of H₂ and N₂ or amixed gas of He and Ar may be used.

In addition, according to the foregoing embodiment, end planes of aresonator are formed by cleaving. Alternatively, end planes of aresonator may be formed by a dry-etching method such as RIE.

As described above, according to the present invention, since astructure, for example, an active region for a semiconductor device or alight emitting region for a semiconductor light emitting device isformed on a nitride type III-V group compound semiconductor substrate, asemiconductor substrate, or a substrate in such a manner that the activeregion or the light emitting region does not pass through any one of thesecond regions whose average dislocation density, average defectdensity, or crystallinity is greater or worse than the first region, theactive region or light emitting region can be prevented from beingadversely affected by the second regions. Thus, a semiconductor devicehaving good characteristics such as good light emitting characteristic,good reliability, and long life or various types of devices having goodcharacteristics, good reliability, and long life can be accomplished.

Although the present invention has been shown and described with respectto a best mode embodiment thereof, it should be understood by thoseskilled in the art that the foregoing and various other changes,omissions, and additions in the form and detail thereof may be madetherein without departing from the spirit and scope of the presentinvention.

1. A structured substrate comprising a nitride type III-V group compoundsemiconductor substrate on which a plurality of second regions made of acrystal having a second average dislocation density are regularlyarranged in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density, wherein thestructured substrate has a structure that does not pass through any oneof the second regions.
 2. The method for producing the structuredsubstrate as set forth in claim 1, further comprising the step of:forming a plurality of portions that are different from other portionsin the interval of the second regions and/or the arrangement thereof asalignment marks so as to align a mask.
 3. A semiconductor light emittingdevice comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions made of a crystalhaving a second average dislocation density are regularly arranged in afirst region made of a crystal having a first average dislocationdensity, the second average dislocation density being greater than thefirst average dislocation density, wherein the semiconductor lightemitting device has a light emitting region that does not pass throughany one of the second regions.
 4. A semiconductor device comprising anitride type III-V group compound semiconductor substrate on which aplurality of second regions made of a crystal having a second averagedislocation density are regularly arranged in a first region made of acrystal having a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, wherein the semiconductor device has an active region that doesnot pass through any one of the second regions.
 5. A structuredsubstrate comprising a nitride type III-V group compound semiconductorsubstrate on which a plurality of second regions made of a crystalhaving a second average dislocation density are regularly arranged in afirst region made of a crystal having a first average dislocationdensity, the second average dislocation density being greater than thefirst average dislocation density, the second regions being arranged ata first interval in a first direction and at a second interval in asecond direction perpendicular to the first direction, the secondinterval being smaller than the first interval, wherein the structuredsubstrate has a structure that does not pass through any one of thesecond regions.
 6. A structured substrate comprising a nitride typeIII-V group compound semiconductor substrate on which a plurality ofsecond regions that linearly extend and that are made of a crystalhaving a second average dislocation density are regularly arranged inparallel in a first region made of a crystal having a first averagedislocation density, the second average dislocation density beinggreater than the first average dislocation density, wherein thestructured substrate has a structure that does not pass through any oneof the second regions.
 7. A semiconductor light emitting devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions made of a crystal having a secondaverage dislocation density are regularly arranged in a first regionmade of a crystal having a first average dislocation density, the secondaverage dislocation density being greater than the first averagedislocation density, the second regions being arranged at a firstinterval in a first direction and at a second interval in a seconddirection perpendicular to the first direction, the second intervalbeing smaller than the first interval, wherein the semiconductor lightemitting device has a light emitting region that does not pass throughany one of the second regions.
 8. A semiconductor light emitting devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, wherein the semiconductor light emitting device has a lightemitting region that does not pass through any one of the secondregions.
 9. A semiconductor device comprising a nitride type III-V groupcompound semiconductor substrate on which a plurality of second regionsmade of a crystal having a second average dislocation density areregularly arranged in a first region made of a crystal having a firstaverage dislocation density, the second average dislocation densitybeing greater than the first average dislocation density, the secondregions being arranged at a first interval in a first direction and at asecond interval in a second direction perpendicular to the firstdirection, the second interval being smaller than the first interval,wherein the semiconductor device has an active region that does not passthrough any one of the second regions.
 10. A semiconductor devicecomprising a nitride type III-V group compound semiconductor substrateon which a plurality of second regions that linearly extend and that aremade of a crystal having a second average dislocation density areregularly arranged in parallel in a first region made of a crystalhaving a first average dislocation density, the second averagedislocation density being greater than the first average dislocationdensity, wherein the semiconductor device has an active region that doesnot pass through any one of the second regions.